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March 1996
NDS355N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones, PCMICA
cards, and other battery powered circuits where fast switching,
and low in-line power loss are needed in a very small outline
Features
1.6A, 30V. R DS(ON) = 0.125 ? @ V GS = 4.5V.
Proprietary package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low R DS(ON) .
Exceptional on-resistance and maximum DC current
capability.
surface mount package.
Compact industry standard SOT-23 surface mount
package.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
NDS355N
30
20
Units
V
V
I D
Drain Current - Continuous
(Note 1a)
± 1.6
A
- Pulsed
± 10
P D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to -Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
? 1997 Fairchild Semiconductor Corporation
NDS355N Rev. D1
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相关代理商/技术参数
NDS355N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS355N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
NDS355N_D87Z 功能描述:MOSFET N-Channel FET LL Enhancement RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS356 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Logic Level Enhancement Mode Field Effect Transistor
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NDS356AP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
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